? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 8ma 2.5 5.0 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c5 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 60 m ? note 1 ds98958e(02/04)) plus 264 tm (ixfb) g = gate d = drain s = source tab = drain s g d (tab) hiperfet tm power mosfets n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 264 tm package for clip or spring mounting z space savings z high power density ixfb 80n50q2 v dss = 500 v i d25 = 80 a r ds(on) = 60 m ? ? ? ? ? t rr 250 ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c80a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c f c mounting force 30...120/7.5...27 n/lb weight 10 g
ixys reserves the right to change limits, test conditions, and dimensions. ixfb 80n50q2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 50 65 s c iss 10500 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1610 pf c rss 300 pf t d(on) 29 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 1 ? (external) 60 ns t f 11 ns q g(on) 260 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 125 nc r thjc 0.14 k/w r thck 0.13 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive; 320 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.2 c i rm 8a i f = 25a -di/dt = 100 a/ s v r = 100 v terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 264 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 %
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 024681012 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0123456 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to 0.5 i d25 v alue vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalize d i d = 80a i d = 40a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 40 80 120 160 200 i d - amperes r d s (on) - normalize d t j = 125oc t j = 25oc v gs = 10v ixfb 80n50q2
ixys reserves the right to change limits, test conditions, and dimensions. ixfb 80n50q2 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v g s - volts v ds = 250v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 3.54.55.56.57.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- drain voltage 0 40 80 120 160 200 240 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maxim um transient therm al resistance 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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